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APT60GA60JD60
600V High Speed PT IGBT
(R)
E
E
POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved 7 22 C G through leading technology silicon design and lifetime control processes. A reduced Eoff TSO VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low gate charge and a greatly reduced ratio of Cres/Cies provide excellent noise immunity, short "UL Recognized" ISOTOP (R) delay times and simple gate drive. The intrinsic chip gate resistance and capacitance of the APT60GA60JD60 poly-silicone gate structure help control di/dt during switching, resulting in low EMI, even when switching at high frequency. Combi (IGBT and Diode)
file # E145592
FEATURES
* Fast switching with low EMI * Very Low Eoff for maximum efficiency * Ultra low Cres for improved noise immunity * Low conduction loss * Low gate charge * Increased intrinsic gate resistance for low EMI * RoHS compliant
TYPICAL APPLICATIONS
* ZVS phase shifted and other full bridge * Half bridge * High power PFC boost * Welding * UPS, solar, and other inverters * High frequency, high efficiency industrial
Absolute Maximum Ratings
Symbol
Vces IC1 IC2 ICM VGE PD SSOA TJ, TSTG
Parameter
Collector Emitter Voltage Continuous Collector Current @ TC = 25C Continuous Collector Current @ TC = 100C Pulsed Collector Current 1 Gate-Emitter Voltage
2
Ratings
600 112 60 178 30 356 178A @ 600V -55 to 150
Unit
V
A
V W
Total Power Dissipation @ TC = 25C Switching Safe Operating Area @ TJ = 150C Operating and Storage Junction Temperature Range
C
Static Characteristics
Symbol
VBR(CES) VCE(on) VGE(th) ICES IGES
TJ = 25C unless otherwise specified
Test Conditions
VGE = 0V, IC = 1.0mA VGE = 15V, IC = 62A VCE = 600V, VGE = 0V TJ = 25C TJ = 125C 3 TJ = 25C TJ = 125C
Parameter
Collector-Emitter Breakdown Voltage Collector-Emitter On Voltage Gate Emitter Threshold Voltage Zero Gate Voltage Collector Current Gate-Emitter Leakage Current
Min
600
Typ
2.0 1.9 4.5
Max
2.5 6 275 3000 100
Unit
V
VGE =VCE , IC = 1mA
A
052-6340 Rev C 3 - 2009
VGS = 30V
nA
Microsemi Website - http://www.microsemi.com
Dynamic Characteristics
Symbol
Cies Coes Cres Qg3 Qge Qgc SSOA td(on) tr td(off) tf Eon2 Eoff6 td(on) tr td(off) tf Eon2 Eoff6
TJ = 25C unless otherwise specified
Test Conditions
Capacitance VGE = 0V, VCE = 25V f = 1MHz Gate Charge VGE = 15V VCE= 300V IC = 62A TJ = 150C, RG = 4.74, VGE = 15V, L= 100uH, VCE = 600V Inductive Switching (25C) VCC = 400V VGE = 15V IC = 62A RG = 4.74 TJ = +25C Inductive Switching (125C) VCC = 400V VGE = 15V IC = 62A RG = 4.74 TJ = +125C 178 35 49 175 91
APT60GA60JD60
Min Typ
8010 714 74 296 106 60 A nC pF
Parameter
Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Emitter Charge Gate- Collector Charge Switching Safe Operating Area Turn-On Delay Time Current Rise Time Turn-Off Delay Time Current Fall Time Turn-On Switching Energy Turn-Off Switching Energy Turn-On Delay Time Current Rise Time Turn-Off Delay Time Current Fall Time Turn-On Switching Energy Turn-Off Switching Energy
Max
Unit
ns
1450 1255 33 49 214 119 1995 1760
J
ns
J
Thermal and Mechanical Characteristics
Symbol
RJC RJC WT VIsolation
Characteristic
Junction to Case Thermal Resistance (IGBT) Junction to Case Thermal Resistance (Diode) Package Weight RMS Voltage (50-60Hz Sinusoidal Waveform from Terminals to Mounting Base for 1 Min.)
Min
-
Typ
-
Max
.35 .60
Unit
C/W g Volts
2500
29.2
-
1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature. 2 Pulse test: Pulse Width < 380s, duty cycle < 2%. 3 See Mil-Std-750 Method 3471. 4 RG is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452) 5 Eon2 is the clamped inductive turn on energy that includes a commutating diode reverse recovery current in the IGBT turn on energy loss. A combi device is used for the clamping diode. 6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. Microsemi reserves the right to change, without notice, the specifications and information contained herein.
052-6340 Rev C 3 - 2009
Typical Performance Curves
200 175 IC, COLLECTOR CURRENT (A) 150 125 100 75 50 25 0 0 1 2 3 4 5 6 VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) FIGURE 1, Output Characteristics (TJ = 25C) VGE, GATE-TO-EMITTER VOLTAGE (V)
250s PULSE TEST<0.5 % DUTY CYCLE
APT60GA60JD60
350 13V 15V 11V 10V
V
GE
= 15V
IC, COLLECTOR CURRENT (A)
TJ= 55C TJ= 125C TJ= 25C
TJ= 150C
300 250
9V 200 150 100 7V 50 0 6V 0 4 8 12 16 20 24 28 32 VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) FIGURE 2, Output Characteristics (TJ = 25C)
I = 62A C T = 25C
J
8V
200 175 IC, COLLECTOR CURRENT (A) 150 125 100 75 50 25 0 0
16 14 12 10 8 6 4 2 0
VCE = 120V VCE = 300V
VCE = 480V
TJ= 25C TJ= 125C 2 TJ= -55C
4 6 8 10 12 13 14 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 3, Transfer Characteristics
TJ = 25C. 250s PULSE TEST <0.5 % DUTY CYCLE
0
50
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
4
5
100 150 200 250 300 GATE CHARGE (nC) FIGURE 4, Gate charge
350
4
3
IC = 124A IC = 62A
3
IC = 124A IC = 62A
2 IC = 31A 1
2
1
VGE = 15V. 250s PULSE TEST <0.5 % DUTY CYCLE
IC = 31A
0
6
8
10
12
14
16
0
0
25
50
75
100
125
150
VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 5, On State Voltage vs Gate-to-Emitter Voltage
1.15
TJ, Junction Temperature (C) FIGURE 6, On State Voltage vs Junction Temperature 125
VGS(TH), THRESHOLD VOLTAGE (NORMALIZED)
1.10 1.05 1.00 0.95 0.90 0.85 0.80 0.75 0.70
IC, DC COLLECTOR CURRENT (A)
100
75
50
25
0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE FIGURE 7, Threshold Voltage vs Junction Temperature
-50 -25
50 75 100 125 150 TC, Case Temperature (C) FIGURE 8, DC Collector Current vs Case Temperature
0
25
052-6340 Rev C 3 - 2009
Typical Performance Curves
50 td(OFF), TURN-OFF DELAY TIME (ns) td(ON), TURN-ON DELAY TIME (ns) 45 40 35 30 25 20 15 10 5 0
VCE = 400V TJ = 25C, or 125C RG = 4.7 L = 100H
APT60GA60JD60
300 250 200 150 100 50 0
VCE = 400V RG = 4.7 L = 100H VGE =15V,TJ=25C
VGE = 15V
VGE =15V,TJ=125C
0 25 50 75 100 125 ICE, COLLECTOR-TO-EMITTER CURRENT (A) FIGURE 9, Turn-On Delay Time vs Collector Current
RG = 4.7, L = 100H, VCE = 400V
0 25 50 75 100 125 ICE, COLLECTOR-TO-EMITTER CURRENT (A) FIGURE 10, Turn-Off Delay Time vs Collector Current 200
RG = 4.7, L = 100H, VCE = 400V
150 125 100 75 50 25 0
160
TJ = 125C, VGE = 15V
tr, RISE TIME (ns)
tr, FALL TIME (ns)
120
80
TJ = 25C, VGE = 15V
TJ = 25 or 125C,VGE = 15V
40
0 25 50 75 100 125 ICE, COLLECTOR-TO-EMITTER CURRENT (A) FIGURE 11, Current Rise Time vs Collector Current 7000 6000 5000 4000 3000 2000 1000 0
TJ = 25C TJ = 125C
EOFF, TURN OFF ENERGY LOSS (J)
Eon2, TURN ON ENERGY LOSS (J)
V = 400V CE V = +15V GE R = 4.7
G
0 25 50 75 100 125 ICE, COLLECTOR-TO-EMITTER CURRENT (A) FIGURE 12, Current Fall Time vs Collector Current 5000
V = 400V CE V = +15V GE R = 4.7
G
0
4000
3000
TJ = 125C
2000
1000
TJ = 25C
0 25 50 75 100 125 ICE, COLLECTOR-TO-EMITTER CURRENT (A) FIGURE 13, Turn-On Energy Loss vs Collector Current 12000 SWITCHING ENERGY LOSSES (J) 10000 8000 6000 4000 2000 0
Eoff,26A Eon2,26A Eoff,13A Eon2,13A
V = 400V CE V = +15V GE T = 125C
J
0 25 50 75 100 125 ICE, COLLECTOR-TO-EMITTER CURRENT (A) FIGURE 14, Turn-Off Energy Loss vs Collector Current 7500 SWITCHING ENERGY LOSSES (J)
V = 400V CE V = +15V GE R = 4.7
G
0
Eon2,52A
Eon2,52A Eon2,52A
6000
Eon2,52A
4500
052-6340 Rev C 3 - 2009
3000
Eoff,26A Eoff,26A Eon2,13A Eoff,13A
1500
10 20 30 40 50 RG, GATE RESISTANCE (OHMS) FIGURE 15, Switching Energy Losses vs Gate Resistance
0
25 50 75 100 125 TJ, JUNCTION TEMPERATURE (C) FIGURE 16, Switching Energy Losses vs Junction Temperature
0
0
Typical Performance Curves
10000 500 Cies C, CAPACITANCE (pF) 1000
APT60GA60JD60
IC, COLLECTOR CURRENT (A)
100
10
Coes 100 Cres 10
1
0
100
200
300
400
500
VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) FIGURE 17, Capacitance vs Collector-To-Emitter Voltage
1 10 100 1000 VCE, COLLECTOR-TO-EMITTER VOLTAGE FIGURE 18, Minimum Switching Safe Operating Area
0.1
0.40 ZJC, THERMAL IMPEDANCE (C/W) 0.35 0.30 0.25 0.20 0.15 0.3 0.10 0.05 0 10-5 0.1 0.05 10
-4
D = 0.9
0.7 0.5
Note:
PDM
t1 t2
SINGLE PULSE
Duty Factor D = 1/t2 Peak TJ = PDM x ZJC + TC
t
10 -3 10 -2 10 -1 1.0 RECTANGULAR PULSE DURATION (SECONDS) Figure 19a, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
10
TJ (C)
TC (C)
Dissipated Power (Watts)
.0075
.3033
5.2132
ZEXT are the external thermal impedances: Case to sink, sink to ambient, etc. Set to zero when modeling only the case to junction.
FIGURE 19b, TRANSIENT THERMAL IMPEDANCE MODEL
ZEXT
.0736
.2093
.0658
052-6340 Rev C 3 - 2009
APT60GA60JD60
10%
Gate Voltage
td(on)
TJ = 125C 90% tr Collector Current
APT30DQ60
V CC
IC
V CE
5%
10% 5% Collector Voltage
A D.U.T.
Switching Energy
Figure 20, Inductive Switching Test Circuit
Figure 21, Turn-on Switching Waveforms and Definitions
90% td(off)
TJ = 125C Gate Voltage Collector Voltage
tf
10%
0
Collector Current
Switching Energy
Figure 22, Turn-off Switching Waveforms and Definitions
052-6340 Rev C 3 - 2009
ULTRAFAST SOFT RECOVERY RECTIFIER DIODE
MAXIMUM RATINGS Symbol Characteristic / Test Conditions
IF(AV) IF(RMS) IFSM Maximum Average Forward Current (TC = 92C, Duty Cycle = 0.5) RMS Forward Current (Square wave, 50% duty) Non-Repetitive Forward Surge Current (TJ = 45C, 8.3 ms)
All Ratings: TC = 25C unless otherwise specified. APT60GA60JD60
60 79 600 Amps
Unit
STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions
IF = 60A VF Forward Voltage IF = 120A IF = 60A, TJ = 125C
Min
Type
1.7 2.0 1.4
Max
Unit
Volts
DYNAMIC CHARACTERISTICS Symbol Characteristic
trr trr Qrr IRRM trr Qrr IRRM trr Qrr IRRM Reverse Recovery Time Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current IF = 60A, diF/dt = -1000A/s VR = 400V, TC = 125C IF = 60A, diF/dt = -200A/s VR = 400V, TC = 125C IF = 60A, diF/dt = -200A/s VR = 400V, TC = 25C
Test Conditions
IF = 1A, diF/dt = -100A/s, VR = 30V, TJ = 25C
Min
-
Typ 160 70 100 4 140 690 9 80 1540 31
Max
-
Unit
ns
nC Amps ns nC Amps ns nC Amps
052-6340 Rev C 3 - 2009
Dynamic Characteristics
200 180 IF, FORWARD CURRENT (A) 160 140 120 100 80 60 40 20 0 0 TJ = 125C TJ = 25C TJ = -55C TJ = 175C
TJ = 25C unless otherwise specified
300 trr, REVERSE RECOVERY TIME (ns) 120A
APT60GA60JD60
T = 125C J V = 400V
R
250
200 60A 150 30A 100
50 0 0 200 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE(A/s) Figure 3. Reverse Recovery Time vs. Current Rate of Change IRRM, REVERSE RECOVERY CURRENT (A) 30
T = 125C J V = 400V
R
0.5 1 1.5 2 2.5 3.0 VF, ANODE-TO-CATHODE VOLTAGE (V) Figure 2. Forward Current vs. Forward Voltage 2000 Qrr, REVERSE RECOVERY CHARGE (nC) 1800 1600 1400 1200 1000 800 600 400 200 0 200 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE (A/s) Figure 4. Reverse Recovery Charge vs. Current Rate of Change 1.4 Kf, DYNAMIC PARAMETERS (Normalized to 1000A/s) 1.2 1.0 0.8 0.6 0.4 0.2 0.0 Qrr trr IRRM trr Qrr 0 30A 60A
T = 125C J V = 400V
R
120A
120A
25
20
15
60A
10
30A
5 0
0 200 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE (A/s) Figure 5. Reverse Recovery Current vs. Current Rate of Change 120 100 80 IF(AV) (A) 60 40 20 0
Duty cycle = 0.5 T = 175C
J
25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 6. Dynamic Parameters vs. Junction Temperature 350 CJ, JUNCTION CAPACITANCE (pF) 300 250 200 150 100 50 0 10 100 200 VR, REVERSE VOLTAGE (V) Figure 8. Junction Capacitance vs. Reverse Voltage 1
0
75 100 125 150 175 Case Temperature (C) Figure 7. Maximum Average Forward Current vs. CaseTemperature
25
50
052-6340 Rev C 3 - 2009
Dynamic Characteristics
TJ = 25C unless otherwise specified
Vr
APT60GA60JD60
+18V 0V
diF /dt Adjust
APT60GT60BR
D.U.T. 30H
trr/Qrr Waveform
PEARSON 2878 CURRENT TRANSFORMER
Figure 33. Diode Test Circui t
1 2 3 4
IF - Forward Conduction Current diF /dt - Rate of Diode Current Change Through Zero Crossing. IRRM - Maximum Reverse Recovery Current. Zero
1
4
5 3 2
0.25 IRRM
trr - Reverse Recovery Time, measured from zero crossing where diode current goes from positive to negative, to the point at which the straight line through IRRM and 0.25 IRRM passes through zero. Qrr - Area Under the Curve Defined by IRRM and trr.
5
Figure 34, Diode Reverse Recovery Waveform and Definitions
SOT-227 (ISOTOP(R)) Package Outline
31.5 (1.240) 31.7 (1.248) 7.8 (.307) 8.2 (.322) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 11.8 (.463) 12.2 (.480) 8.9 (.350) 9.6 (.378) Hex Nut M4 (4 places)
r = 4.0 (.157) (2 places)
4.0 (.157) 4.2 (.165) (2 places)
25.2 (0.992) 0.75 (.030) 12.6 (.496) 25.4 (1.000) 0.85 (.033) 12.8 (.504)
3.3 (.129) 3.6 (.143) 14.9 (.587) 15.1 (.594) 30.1 (1.185) 30.3 (1.193) 38.0 (1.496) 38.2 (1.504)
1.95 (.077) 2.14 (.084)
* Emitter/Anode
Collector/Cathode
* Emitter/Anode terminals are shorted internally. Current handling capability is equal for either Emitter/Anode terminal.
* Emitter/Anode Dimensions in Millimeters and (Inches)
Gate
Microsemi's products are covered by one or more of U.S. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743, 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. US and Foreign patents pending. All Rights Reserved.
052-6340 Rev C 3 - 2009

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